Abstract

An idea towards the low threshold optical bistability and tunability of bistable thresholds at THz frequency under realistic situation is analyzed through a proposed multilayered configuration. The proposed configuration comprises a coupling prism of silicon, and monolayer graphene sheets spatially separated through 35 nm thick polymer which is sandwiched between an air gap of thickness 4.6 μm and a kerr polymer (GaAs) at 300 K temperature and at an incident light frequency of 2 THz. Utilizing the large nonlinear effect of the configuration obtained by the nonlinearity of the kerr polymer and the high local field effect due to long-range graphene surface plasmon resonance, the switching-down and switching-up threshold values for optical bistability have been markedly reduced upto 1.21×105 V/m and 1.24×105 V/m respectively thereby rendering a minimum threshold intensity of 7.2 kW/cm2 than the articles reported till date. Tunability of the switching-down and switching-up threshold values have also been realized from 1.21×105 V/m to 5.18×105 V/m and 1.24×105 V/m to 1.424×106 V/m respectively through electrical or chemical modification of the charge carrier density and hence fermi energy of the graphene from 0.23 eV to 0.41 eV and from 1.21×105 V/m to 1.56×105 V/m and 1.24×105 V/m to 2.12×105 V/m respectively for the variation in incident angle from 70° to 88°. The effect of damping rate of graphene on optical bistability behavior has also been observed. Therefore the proposed optical bistable configuration finds potential applications in the field of all-optical switching, optical transistor, optical logic, nano-illumination and optical memory with low input threshold at THz frequency and can also be used to realize tunable optical bistable device for future THz optical communication technology.

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