Abstract
The mean free path (mfp) of hot ballistic electrons, injected into high-purity GaAs, was measured and found to be several micrometers long. The hot electrons were injected at energies just below the LO-phonon emission threshold and their mfp was measured by two techniques: first, by comparing different devices with different layer thickness; and second, in a single device, utilizing the cyclotron motion of ballistic electrons in tilted magnetic fields. We find the mfp scales roughly inversely with impurity concentration. We suggest that the dominant scattering is due to impact ionization of neutral impurities.
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