Abstract
Longitudinal piezoresistance coefficient ? l and conductance in the p-type silicon nanostructures with different dimensionality of holes D such as quantum wires D=1, quantum films D=2 and bulk silicon D=3 are investigated in the ballistic transport regime. Energy spectrum of holes for the low dimensional structures was accepted in the quasi-classical approximation. Piezoresistance coefficient ? l and conductance of nanostructures oriented along the [100], [110] and [111] crystallographic directions are calculated as function of temperature, concentration of holes, confining dimensions and elastic stress. The origin of the giant pezoresistance effect in the p-type silicon nanostructures at room temperature is explained by the concentration of stress in regions of the nanostructure depleted by holes. Using the only one parameter (the stress concentration factor) both qualitative and quantitative agreement was obtained between computational results and known experimental data.
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