Abstract
A longitudinal photoeffect in In0.53Ga0.47As p-n junctions was investigated: the dependence of the longitudinal photoemf Vph 1 on the coordinates of the light spot, the temperature, and the magnetic field. The dependences on the coordinates of the light spot were found to be linear; the theoretical values of Vph 1 agree with the experimental values. The temperature variation of Vph 1 in the interval 100–300 K is explained by the variation of the current-carrier mobility as a result of thermal scattering by the lattice. In a magnetic field, Vph 1 is observed to increase as a result of the photomagnetic effect.
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