Abstract
Electron drift mobility longitudinal to hydrogenated amorphous silicon/silicon nitride multilayer structures has been measured by the time-of-flight method. Transient photocurrent shows a clear kink corresponding to the transit time. The room-temperature electron mobility in multilayer structures is smaller by three or four orders of magnitude than that observed in bulk a-Si:H. The room-temperature electron mobility decreases with decreasing well layer width at constant layer thickness of 13 Å, while the activation energy of the mobility increases. The lifetime of electrons tends to increase when the well layer thickness is reduced.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.