Abstract
The first measurements of large anisotropic modulation of long-wavelength light with a large on/off ratio and low driving voltage propagating along the plane of InGaAs/InAlAs multiple quantum well (MQW) structures grown by molecular beam epitaxy (MBE) are reported. Photocurrent response and optical modulation of waveguide pin diodes is measured for incident light polarization parallel and perpendicular to the MQW layers emitting from a color center laser. The incident-light power and wavelength dependence of on/off ratio are also determined.
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