Abstract
Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) based on the AlGalnAs/InP material system are demonstrated in the wavelength range from 1.3 to 2.0 /spl mu/m. Single mode emission with an output power of up to 1.7 mW at room temperature was observed in continuous-wave mode. Furthermore, high-speed modulation up to 10 Gbit/s was realized and micro-mechanically tunable VCSELs based on a two-chip concept were investigated showing a tuning range of 30 nm under single mode condition.
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