Abstract
Single-lateral mode, long-wavelength, waveguide diode-ring lasers have been fabricated in InP-InGaAsP with facets etched using CAIBE. The devices lase at around 1.26 /spl mu/m under pulsed testing. The lowest threshold current is around 64 mA, The best side-mode-suppression ratio (SMSR) is found to be 25.4 dB. Triangular ring lasers demonstrated significantly higher SMSR than Fabry-Perots fabricated on the same chip. Ring laser far-field and output power dependence on structural angle are also reported.
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