Abstract
We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al0.3Ga0.7As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In0.15Ga0.85As DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.
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