Abstract
This paper reviews recent studies of structural and optical properties of long wavelength GaInNAs/GaAs quantum well semiconductors and the performance features of GaInNAs/GaAs vertical cavity surface emitting lasers (VCSELs) and edge-emitting lasers. The studies forecast that GaInNAs VCSELs and possibly edge-emitting lasers will become a compliment, or even a replacement, to the now dominant InP-based devices at 1.3-μm short-haul data transmission systems, but whether GaInNAs lasers in general will ever be competitive with the InP lasers at 1.4–1.6 μm is an entirely open issue today. The dilute nitride technology has still some distance to go in addressing its remaining concerns; yet, the authors believe that it is still the best bet to bring about the long-waited breakthrough in the component technology for optical fibre networks.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
