Abstract
The lattice temperature in a 1.5 μm wavelength InP-based vertical-cavity surface-emiting laser (VCSEL) was varied between 273 K until 353 K using an industrial-based numerical simulator and its effects on the characteristics of the device was analysed. The temperature fluctuation has a direct effect on the gain distribution, causes a peak wavelength shift and is the precursor for various dark current processes within the laser. The device employs InGaAsP multi-quantum wells (MQW) sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors (DBRs). The thermal resistance used to model the electrical contacts causes an approximate 13 K temperature rise above the ambient temperature (300 K) at a bias of 3 V and a 50 % increase in the threshold current is observed with temperature increment. Various heat sources elements within the VCSEL device were also analysed upon increment of lattice temperature.
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