Abstract
We address and explain the occurrence of bulk and interface modes in zinc-blende group-III--group-V semiconductor layer structures observed by spectroscopic ellipsometry at infrared wavelengths. Fano- and Brewster-type transverse-magnetic ($p$-polarized) interface modes as well as transverse-electric ($s$-polarized) surface-guided interface modes are assigned by solutions of the surface polariton dispersion relations for polar semiconductor layer structures. We show that the Berreman-effect [D. W. Berreman, Phys. Rev. 130, 2193 (1963)] is associated with the occurrence of a Fano-interface polariton. Experimental verification is demonstrated for a GaAs homostructure, which consists of differently Te-doped $n$-type substrates covered by undoped epilayers.
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