Abstract
Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD) laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ～1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates.
Highlights
Silicon, one of the most important semiconductor materials, offer fantastic electronic and mechanical properties, but is abundant, low-cost, and toxic-free
We describe the operation of III-V quantum dot (QD) superluminescent light emitting diodes (SLDs) on Si substrates producing a broad linewidth of 114 nm at ~1255 nm with a corresponding output power of 2.6 mw at room temperature
We have investigated the effect of InAlAs/GaAs strained layer superlattices (SLSs) serving as dislocation filter layers (DFLs), which provide an effective method to reduce the density of threading dislocation and can lead to high quality
Summary
One of the most important semiconductor materials, offer fantastic electronic and mechanical properties, but is abundant, low-cost, and toxic-free. III-V compound semiconductors, such as GaAs and InP, have a direct bandgap and have high light emission efficiency Such materials are more expensive than silicon. The growth of III-V light emitters on Si substrates to combine the advantages of both has recently stimulated enormous scientific interest for applications ranging from chip-to-chip, system-to-system optical interconnectors and telecommunications [1]. Still another benefit of integrating GaAs and InP on Si substrates is for taking advantage of the comparably higher thermal conductivity of Si to improve the heat sinking of GaAs and InP devices. The capacity to fabricate high quality III-V’s, typically GaAs, on Si substrates is the “holy grail”
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