Abstract
Low temperature (30K) long wavelength photoluminescence emission (λ=1400–1600nm) from metalorganic chemical vapor deposition grown InGaAsN–GaAsSb type II “W” quantum wells (QWs), on GaAs substrates has been demonstrated. Thin layers (2–3nm) and high antimony-content (30%) GaAsSb were utilized in this study for realizing satisfactory wave function overlap and long wavelength emission. Tensile strained GaAsP barriers effectively improve the material structural and luminescence properties of the compressive strained active region. Room temperature photoluminescence data show that the type-II QW design is a promising candidate for realizing long wavelength GaAs-based diode lasers beyond 1500nm.
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