Abstract
The demonstration of a Si/sub 1-x/Ge/sub x//Si multiquantum-well infrared detector is reported. The quantum-well structure consists of 50 periods of 30-AA-thick Si/sub 0.85/Ge/sub 0.15/ wells (doped p=1*10/sup 19/ cm/sup -3/) separated by 300-AA-thick undoped Si barriers with p/sup +/ ohmic contacts on both sides. The quantum well is designed so that only the ground state is confined in the quantum well. The feasibility of Si-based highly sensitive long-wavelength infrared detectors with the advantage of monolithic integration with Si integrated circuits was demonstrated.
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