Abstract
The results of a study of multilayer photodiodes based on InAs1- x Sb x solid solutions (0.3 < x <0.4), with a long-wavelength cut-off of λ 0.1 ≈ 11 μm at room temperature are presented. The current-voltage and spectral characteristics of photosensitivity and electroluminescence were analyzed in the temperature range of 80 ÷ 300 K. Experimental samples of photodetectors are characterized by a quantum efficiency of 0.23 at 150 K and a diffusion mechanism of current flow at least in the 200-300 K range. The detectivity of the immersion lens PD at the maximum has values of at least D*8 µm = 8·108 and D* 5.5 µm = 1010 cm·Hz1/2W-1 at 300 and 150 K, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
