Long-wave bilayer graphene/HgCdTe based GBp type-II superlattice unipolar barrier infrared detector

Abstract

Type-II superlattice (T2SL) material is used to design highly efficient next-generation infrared (IR) detectors. The flexibility of the material allows the integration of unipolar barrier IR detector architecture to suppress generation-recombination currents by blocking the majority charge carriers and improve device performance. This paper presents a self-powered T2SL unipolar barrier detector that operates in the long-wave IR regime. It comprises a contact layer made of p+-bilayer graphene (G) and a barrier layer made of p–-Hg1–xCdx=0.41Te (B) placed over a p+-Hg1–xCdx=0.2217Te absorber layer (p) and is known as the GBp detector. The optoelectronic characterization of the unipolar GBp detector is carried out using the Silvaco Atlas TCAD software. Under self-powered mode operation, the proposed GBp detector exhibits an improvement in photocurrent density of about 108 times. The dark current density of 0.4nA/cm2, the photocurrent responsivity of 7.82 A/W, the quantum efficiency of 91.44%, and the detectivity of 4.48 × 1014 cmHZ1/2/W are found at the liquid nitrogen temperature with a bias of –0.5 V. A dichroic ratio of 249 and a response time of less than 1 ps are likewise exhibited by the GBp detector. The substantial electric field at the contact/barrier heterointerface and the high barrier height in the conduction band, which result in an increased photodetection response, are attributed to this improved performance.