Abstract
In this work characterization of HfO 2 films in transient regime is presented. Charge trapping and detrapping, and degradation transients were investigated at long times while monitoring gate current or voltage. As for charge trapping, a logarithmic dependence on time was found. The entity of the external perturbation inducing degradation was influenced by the HfO 2thickness. The detrapping rate was systematically studied as a function of pulse features and film thickness, and was found to depend only on the HfO 2 thickness, with a power law behavior as a function of time.
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