Abstract
Experimental studies of long-term (more than 7 years) temporal relaxation at the room terms of electric parameters (concentration and mobility) of the CdHgTe n + -n structures formed by an ion milling are studied. It is shown that parameters of samples after short-term relaxation (about 200000 min), are saved during of long-term aging. Thus, the method of ion milling can be used for forming of р-n junction of CdHgTe photodiodes.
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