Abstract
Microheaters with long-term stability are crucial for the development of a variety of microelectronic devices operated at high temperatures. Structured Ta/Pt bilayers, in which the Ta sublayer ensures high adhesion of the Pt resistive layer, are widely used to create microheaters. Herein, a comprehensive study of the microstructure of Ta/Pt films using high-resolution transmission electron microscopy with local elemental analysis reveals the twofold nature of Ta after annealing. The main fraction of Ta persists in the form of tantalum oxide between the Pt resistive layer and the alumina substrate. Such a sublayer hampers Pt recrystallization and grain growth in bilayered Ta/Pt films in comparison with pure Pt films. Tantalum is also observed inside the Pt grains as individual Ta nanoparticles, but their volume fraction is only about 2%. Microheaters based on the 10 nm Ta/90 nm Pt bilayers after pre-annealing exhibit long-term stability with low resistance drift at 500 °C (less than 3%/month).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
