Abstract

Different kinetic behavior has been revealed for the two types of irradiated high resistivity silicon detectors in the reactions of the interstitial carbon (C{sub i}) annealing and the formation of the C{sub i}-O{sub i} complex. In the detectors with an increased oxygen contents prolonged growth of the C{sub i}-O{sub i} complex concentration obeyed the second order reaction due to an additional source of C{sub i} atoms which were not detected by DLTS measurements. Transformation of carbon related defects has been analyzed concerning the long term instability of irradiated silicon detectors. 5 refs., 2 figs.

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