Abstract
The new 1.2 kV trench IGBT developed at Hitachi ABB Power Grids features not only state-of-the-art protection of the active trench with dummy trenches and a deep p-well implant but also a novel plasma flow control. These features allow for full design freedom along the technology curve, while ensuring the long-term stability of the trench gate oxide. Devices with differently engineered plasma flow controls were stressed with repetitive turn-off pulses (RRBSOA) at elevated voltages and currents. This way, the influence of the plasma flow control feature on the lifetime stability of the IGBT (with different dynamic avalanche characteristics) can be assessed.
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