Abstract
The aim of this paper is to give an extensive presentation of the defect-related degradation of InGaN-based laser diodes (LDs) submitted to constant current stress, at room temperature. The analysis is based on combined electrical-optical characterization, the capacitance-temperature analysis, and deep-level transient spectroscopy (DLTS). The results show that stress induces a significant increase of the threshold current and the appearance of two defects, possibly related to point defects arranged along lines.
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