Abstract
A series of electron irradiations has been performed on diamond and 4H SiC single crystalspecimens. A wide range of different doses and dose rates was investigated. In addition,a more limited investigation of localized hydrogen and helium implantation of4H SiC has been made. The electron energies were sufficient to cause atomicdisplacements creating vacancies and self-interstitials in the irradiated samples. Afterelectron-irradiation or implantation the samples were studied by low temperature (∼7 K) photoluminescence microscopy. It was found that some of the defect centres migratedover large distances outside of the irradiated regions and that this distance increased withincrease of the dose. Two possible explanations for this remarkable behaviour are discussed.One is based on the absorption by the defects of light created by recombination of electronsand holes in the irradiated or implanted region. The other deals with the consequences ofrecombination-enhanced migration at point defects that traps carriers as they are drivenout of the irradiated region by electric fields created during the irradiation or implantationprocess. Interstitial atoms are deduced as migrating further than vacancies in this process.
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