Abstract
ABSTRACTPrevious work has demonstrated that B-H pairs in silicon thermally dissociate obeying simple first order kinetics if theyare located in a region depleted of majority carriers. B.H debonding in equilibrium, however, is a slower, more complex process. We have investigated the dissociation of B.H pairs under a variety of equilibrium and non-equilibrium conditionsand have demonstrated that the dissociation process is strongly influenced by the local concentration of majority and minority carriers. In particular, we show that injection of minority carriers can markedly accelerate the dissociation process. A model is proposed which suggests that hydrogen released from an acceptor, while initially positive, must always beneutralized before escape is possible. This picture correctly describes the time dependence of debonding in equilibrium, and it predicts the enhanced debonding in forward biassed diodes provided the characteristic time for H charge conversionislong.
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