Abstract
Time-resolved photoluminescence (PL) measurements of high-quality self-assembled small In0.5Ga0.5As/GaAs quantum dots (QDs) show that the PL decay time of the QD ground state transition is nearly constant when the temperature is below 80 K and increases monotonously from 1.0 to 5.5 ns when the temperature increases from 80 to 300 K. The increased radiative lifetime of the QD ground state at higher temperatures is attributed to the thermal population of the subwetting-layer continuum states and could be one of the fundamental reasons for the low modal gain of the QD ground state transition in single-layer self-assembled QD lasers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
