Abstract
The influence of regrowth interface on the lifetime of the two step MOCVD-grown AlGaAs lasers is investigated. It is shown that the distance between the active layer and the regrowth interface is an important factor to achieve a long lifetime. By setting the above distance at more than 1 μm, at least 250,000 h lifetime, which is compararable to that of reliable LPE-grown lasers, has been estimated for the 780 nm SBA laser under the accelerating life test condition of 70°C, 5 mW. A model for accounting the gradual and saturating degradation during the life test is also proposed in terms of the increase of defect concentration in the active layer.
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