Abstract
The kinetics of the photoresponses in constant and microwave electric fields and the variation of the absorption of background radiation in GaP doped with Te (2×1017 cm−3) upon impurity excitation at 5–50 K are investigated. The lifetime of the excited state of the Te donors is determined (∼10−2 s). It is shown that the results presented are consistent with the model of carrier accumulation in long-lived impurity excited states in semiconductors. These results are compared with the results previously obtained for diamond-structure semiconductors.
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