Abstract
The lifetime of charge carriers in the lowest excited states of some impurities of groups III and V in diamond, silicon, and germanium can be several (four to six) orders of magnitude longer that the lifetime of free carriers. Accumulation of carriers in these long-lived states may give rise to several new effects, such as hopping photoconductivity via long-lived excited states of impurities in dc and microwave electric fields, slow relaxation of induced absorption, and infrared absorption at energies lower than the impurity ionization energy.
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