Abstract
Intense, long lived photoluminescence lines with a complex local mode phonon structure are reported in copper-doped silicon. The spectra and luminescence decay times are both studied as a function of sample temperature. We interpret all of these lines as arising from the recombination of excitons bound to a single type of copper-related isoelectronic defect.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
