Abstract
Graphene based three-layer compound film on the silicon substrate is formed by gold deposition of electron beam evaporation (EBE) and graphene transfer. Processed with different high temperature annealing in nitrogen, the film with residual tensile stress of 52.58 MPa at 500 ℃ can be achieved by using an X-ray diffraction (XRD) method. Based on this low stress film, a series of long lifecycle MEMS double-clamped beams (DCBs) are fabricated by the standard MEMS manufacturing technology. The achieved beam can be turned on/off for up to 100 million times at the pull-in voltage of 30 V, which is compatible with the conventional, complementary metal-oxide-semiconductor (CMOS) circuit requirements.
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