Abstract
We propose a concept of magnetoresistive memory with recording function carried by the electric field. The concept stems from the idea of elastic interaction between the layer of ferroelectric-ferroelastic and the ferromagnetic layer with a considerable internal magnetoelastic interaction. In this paper, we consider such features as the arrangement of electrodes, the shape of electric-field-sensitive layer, and limitations on the bit size imposed due to a necessity of being in access of a superparamagnetic limit.
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