Abstract
Characteristics of the logical states of TTL ICs are numerically simulated under repetitively pulsed high-power broadband irradiation. It is demonstrated that the repetitively pulsed irradiation leads to accumulation of thermal energy and internal heating of the transistor structure, which cause the drift of logical levels that may result in static and dynamic errors in the IC. Durations of the leading edges are quantitatively estimated for the switching of the logical states of ICs.
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