Logic Gates Based on Synthetic Antiferromagnetic Bilayer Skyrmions

Abstract

Technologies based on magnetic skyrmions, such as computational devices that can operate at high speed or with low energy consumption, have been proposed by many researchers. Recently, synthetic antiferromagnetic (SAF) structures have been proposed to increase the stability and mobility of skyrmions by reducing or eliminating the skyrmion Hall effect. Here, we numerically study the current-induced dynamics of skyrmions on SAF bilayer structures. We demonstrate the effective control and manipulation of SAF skyrmions, including directional displacement and alignment. Furthermore, we design SAF-skyrmion-based logic gates, such as the and, or, xor, and not gates. Our design provides guidance for future development of spintronic computing devices that use topological nanoscale spin textures as information carriers.