Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization

Abstract

We propose a higher- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> non-hysteric ferroelectric field-effect transistor (FEFET) using reversible domain wall displacement. By separately stimulating reversible and irreversible domain walls, whose concepts have been experimentally suggested recently, our HfZrOx-based FEFET showed remarkable performance as both a logic and a memory device. This was achieved by relatively low-temperature annealing, contributing to the formation of more reversible domain walls in the film. Finally, we demonstrated the feasibility of logic and memory co-integration by common fabrication process with complementary metal-oxide-semiconductor (CMOS) compatibility.