Logarithmic temperature dependence of the electrical resistivity due to dislocation in metals

Abstract

The logarithmic temperature dependence of the dislocation resistivity rho d(T) found by Endo et al (1985) is investigated experimentally in more detail for samples of different deformation modes from those used in the previous experiment. The behaviour of the logarithmic temperature dependence is found to be very sensitive to the dislocation density and its configuration, and also to the species of solute atoms and their concentrations. The results are analysed using the expression rho d(T)=A-B log(T2+TDelta 2) previously introduced, where A and B are constants and TDelta is a characteristic temperature. An experimental relation between TDelta and B is found to coincide with the one proposed by Cochrane et al (1975) and Tsuei (1978) on the basis of the two-level system.