Abstract
A model to evaluate frequency locking by means of a power injection near a side mode of the free-running frequency is presented. Semiconductor optical nonlinearities govern the locking problem; they are represented by nonlinear coefficients that take into account both carrier fluctuations and all relevant fast phenomena. Field equations are derived from coupled-mode theory, accounting for longitudinal variations by means of appropriate mean values. Examples of results show both the single locked frequency-stable operation region and the case when the injected signal and the free-running field coexist.
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