Abstract
A backscattering angle-dependent dechanneling analysis is presented for the location of a misfit dislocation network in strained layers and strained-layer superlattices. Simultaneously this RBS/channeling method permits the determination of the ratio of channeling to the random stopping cross section. An In0.18Ga0.82As/GaAs strained-layer superlattice on (100) GaAs layer superlattice is analyzed with 1.7 MeV He ions. The misfit dislocation network is located at the superlattice-substrate interface. The ratio of 〈100〉 channeling to the random stopping cross section γ = 0.61 is determined at the He ion energy of 1.63 MeV.
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