Abstract
High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm2/V-s, with only minor deviation.
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