Abstract
This paper reports on high-performance (100)- and (110)-oriented single-grain thin-film transistors (SG-TFTs) fabricated below 600°C without any seed substrate. Orientation has been controlled by μ-Czochralski process with an excimer laser. The field-effect mobility of the n-channel transistor is 998 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s for (100) SG-TFTs and 811 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s for (110) SG-TFTs. The field-effect mobility of the p-channel transistor is 292 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V ·s for (100) SG-TFTs and 429 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V ·s for (110) SG-TFTs.
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