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Abstract
Optical Beam Induced Current (OBIC) has been successfully used to locate electrically active defects in IC's. The defects include silicon defects, process defects and electrical overloads. This technique consists of a scanning optical microscope (SOM) with a suitable means of making electrical contact to the device under test (DUT). The induced current is mapped as a function of optical beam position. A reflected light image is simultaneously generated to provide relative location. Application to advanced CMOS VLSI devices will be discussed. The OBIC tool has been used to isolate and observe electrical opens in conductors and anomalous vertical leakage paths in silicon devices. Comparison to other techniques will also be included.
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