Locally Active Memristor with Variable Parameters and Its Oscillation Circuit

Abstract

This paper designs a locally active memristor with two variable parameters based on Chua’s unfolding theorem. The dynamical behavior of the memristor is analyzed by employing pinched hysteresis loop, power-off plot (POP), DC V–I curve, small-signal analysis, and edge-of-chaos theory. It is found that the proposed memristor exhibits nonvolatile and bistable behaviors because of coexisting pinched hysteresis loops. And the variable parameters can realize the rotation of the coexisting pinched hysteresis loops, regulate the range of the locally active region and even transform the shape of the DC V–I curve into S-type or N-type. Furthermore, a simple oscillation circuit is constructed by connecting this locally active memristor with an inductor, a capacitor, a resistance, and a bias voltage. It is shown by analysis that the memristive circuit can generate complex nonlinear dynamics such as multiscroll attractor, initial condition-based dynamics switching, transient phenomenon with the same dynamical state but different offsets and amplitudes, and symmetric coexisting attractors. The measurement observed from the implementation circuit further verifies the numerical results of the oscillation circuit.