Abstract
The characteristics of the localized Wannier exciton in defect layer (GaAs) embedded between two semi-infinite superlattices (GaAs/Al x Ga 1-x As ) are investigated theoretically using a variational approach. It can be clearly seen the exciton changes in character between three- and quasi-two-dimensional states from the variation of exciton binding energy, in-plane radius, and probability in the superlattices (SLs) growth direction. We find that the extensions of exciton in directions both parallel and perpendicular to the interface of SLs almost approach their minimums as the exciton binding energy reaches peak value at a certain defect width. Our results show that the binding energy of the ground exciton state is sensitive to Al concentration x in Al x Ga 1-x As and thicknesses of the constituent layers. The comparison between excitonic behavior in structural defect SLs and single quantum well is made.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
