Abstract
Localized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform infrared spectroscopy technique. Three distinctive localized vibrational modes were observed around 2850, 2922, and 2959 cm−1 for undoped, Si-, and Mg-doped samples. These peaks are related to CH, CH2, and CH3 defect complexes, respectively. However, the localized vibrational modes were not observed in some undoped samples, which is indicative of high quality grown epitaxial layers. It is also observed that the frequencies and intensities of the localized vibrational modes are sample dependent.
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