Abstract
A new versatile procedure combining conventional lithography and focused ion beam coupled to scanning electron microscopy to micromachine high-quality cross-sectional transmission electron microscopy (TEM) samples is proposed. Electron transparent areas are generated with a high degree of localization, within 0.1 μm, over distances of several millimeters in GaAs/GaAlAs heterostructures. TEM observations demonstrate that no defects are introduced during the thinning process and different conditions of illumination are achievable.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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