Abstract
Optimal experimental liquid phase epitaxy growth conditions have been achieved to study by time-resolved photoluminescence the influence of the compensation ratio and temperature on the decay time associated with radiative transition between carriers localized in spatially separated potential wells formed by fluctuations in the local impurity concentration in silicon-doped AlxGa1−xAs. We find that the decay time temperature dependence is a characteristic of a localized system with a mobility edge and can be attributed to the tunneling recombination of electrons and holes followed by a nonradiative transition at a deep electronic level.
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