Abstract
Abstract Organic light-emitting devices (OLEDs) were fabricated with Au-doped ZnO and or ZnO nanoparticles (NPs) as hole injection layer (HIL) and CBP: Ir (TSDPI)2 (pic) as emissive layer to enhance device performances. The photoluminescence intensity of 4,4′-N,N’-dicarbazole-biphenyl(CBP): Ir (TSDPI)2 (pic)/Au −ZnO film at 514 nm is increased by 2.01 times than device with CBP: Ir (TSDPI)2 (pic)/ZnO film. The current efficiency(ηc) and luminance efficiency (L)of green OLEDs with CBP: Ir (TSDPI)2(pic)/10% wt Au −doped ZnO film was 58.6% and 57.0%, respectively higher than CBP: Ir (TSDPI)2 (pic)/ZnO film and 71.6% and 66.0%, respectively higher than device without HIL. This enhanced efficiencies with Au-doped ZnO was correlated with the out-coupling efficiency due to localized surface plasmon resonance (LSPR) generated by Au NPs incorporated in Au-doped ZnO.
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