Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman Spectroscopy.

Abstract

We developed an experimental metrology for measuring local strain in molecular beam epitaxially (MBE) grown crystalline chalcogenide thin films through micro-Raman spectroscopy. For In2Se3 and Bi2Se3 on c-plane sapphire substrates, the transverse-optical vibrational mode (A1 phonon) is most sensitive to strain. We first calibrated the phonon frequency–strain relationship in each material by introducing strain in flexible substrates. The Raman shift–strain coefficient is −1.97 cm–1/% for the In2Se3 A1(LO + TO) mode and −1.68 cm–1/% for the Bi2Se3 A1g2 mode. In2Se3 and Bi2Se3 samples exhibit compressive strain and tensile strain, respectively. The observations are compliant with predictions from the opposite relative thermal expansion coefficient between the sample and the substrate. We also map strain cartography near the edge of as-grown MBE samples. In In2Se3, the strain accumulates with increasing film thickness, while a low strain is observed in thicker Bi2Se3 films.