Localized region of Goos-Hänchen shifts in reflection and transmission based on position-dependent complex conductivity

Abstract

The complex conductivity-dependent localized region of GH shift in transmission as well as reflection are controlled and modified with the position and parameters of deriving fields. The conductivity-dependent dielectric function and the conductivity-dependent refractive index are determined while using the density-matrix approach, Maxwell equations, and four-level conducting mediums. Using that refractive index, we determine the complex conductivity-dependent reflection as well as transmission, and related lateral shift in reflection and also transmission. Significant positive-negative GH-shift in the reflection as well as transmission are reported with variations in position and deriving fields. The normalization condition |R|+|T|=1 is satisfied for each point of the position and deriving field parameters. The maximum positive-negative GH shift in the reflection as well as transmission are computed to SR,T=±50λ. The maximum phase of reflection and transmission is calculated to ±500 microradian. The modified outcomes of this work are helpful in optical sensors as well as waveguide switching technologies.