Localized phonon-polariton modes in periodic GaN nanowire arrays grown by selective area epitaxy (Conference Presentation)

Abstract

Localized surface phonon-polariton (SPhP) resonances in polar semiconductor nanostructures can provide highly sub-diffractional electromagnetic fields. Furthermore, SPhP resonances offer enhanced resonant quality factors when compared to plasmon-polariton based systems. The various material platforms and nanostructure geometries achievable in polar semiconductors suggest they would be ideal platforms for tunable, long-wavelength photonics applications. Moreover, the constituent atomic basis defines the operating frequency regime for SPhP resonances; tunable from the mid-infrared to THz. Here, we investigate Raman active aspects of SPhP modes in GaN nanowire arrays that are grown via selective area molecular beam epitaxy. We detect strong Raman peaks within the Reststrahlen band of GaN that are not found in the bulk GaN Raman spectrum. These SPhP modes occur around 700 cm^-1 (~ 14.3 microns), offering a spectral region for device applications which is currently not accessible by plasmonic based systems or other SPhP enabled materials. Utilizing selective area epitaxy, we created GaN nanowire arrays with various diameters and pitches, from which the Raman spectra showed tuning of the apparent SPhP resonances. Infrared reflectance measurements were also performed with an FTIR microscope to further establish the physical properties of the resonances. Finally, computational studies of the structures’ reflectance were used to solidify our understanding of the geometry/SPhP-resonance-tuning relationship.